AMD Ryzen 3000 DDR4 Scaling – Part II – Samsung B-Die vs Micron E-Die vs Hynix CJR – English version
DDR4 3200 1:1
Now that we have seen how the 5 configurations tested by us behave (2 x 8GB B-Die single-rank, 4 x 8GB B-Die single-rank, 2 x 16GB B-Die dual-rank, 2 x 8GB Hynix CJR and 2 x 8GB Micron E-Die) it’s time to compare them directly, focusing on each frequency separately. For DDR4 3200, 4 x 8GB yields the best Read performance, followed closely by the Micron E-Die kit, respectively the 2 x 16GB B-Die kit.
The Micron E-Die kit has the best Write performance, followed by the HyniX CJR kit, with the 2 x 8GB Samsung B-Die kit on the 3rd place. In the Copy test we see the 2 x 16GB B-Die kit in front, followed by the 2 x 8GB B-Die kit, with the rest of the competitors getting significantly lower results. When it comes to latency, the 2 x 8GB B-Die kit has the best performance, on par with the HyniX CJR kit, being closely followed by the Micron E-Die kit.